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Ultra-High-Efficiency White
LED Drivers
ABSOLUTE MAXIMUM RATINGS
OUT, IN, BITA, BITB, BITC, LD1, LD2, LD3, LD4,
LD5, LD6, LD7, LD8 to GND ................................-0.3V to +6V
LDG to GND........................................................................±0.3V
LX to GND ................................................-0.3V to (V OUT + 0.3V)
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
SETI, REF, MODE, SEL to GND ...................-0.3V to (V IN + 0.3V)
Continuous Power Dissipation (T A = +70°C)
16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW
20-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1; V IN = 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, C OUT = 4.7μF, C REF = 0.22μF, T A = 0°C to +85°C ,
unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
IN Supply Range
IN Undervoltage Lockout Threshold
IN Quiescent Current
IN Shutdown Current
REF Output Voltage
CONDITIONS
50mV typical hysteresis
BITA = BITB = BITC = IN, LD1 to LD8 = GND
BITA = BITB = BITC = GND
I REF = 0
MIN
2.7
2.2
1.230
TYP
2.4
400
0.1
1.250
MAX
5.5
2.6
600
1
1.270
UNITS
V
V
μA
μA
V
REF Line Regulation
REF Load Regulation
Oscillator Frequency
Oscillator Maximum Duty Cycle
2.7V < V IN < 5.5V
-1μA < I REF < +50μA
0.8
0.2
5
1
85
5
15
1.2
mV
mV
MHz
%
OUT Overvoltage Protection (OVP)
Threshold
V LD1 to V LD8 = 50mV, OUT rising, 100mV typical
hysteresis
5.1
5.3
5.5
V
INTERNAL MOSFET SWITCHES
N-Channel MOSFET On-Resistance
N-Channel MOSFET Leakage Current
P-Channel MOSFET On-Resistance
P-Channel MOSFET Leakage Current
I LX = 200mA
V LX = 5.5V, BITA = BITB = BITC = GND
I LX = 200mA
LX = GND, V OUT = 5.5V, BITA = BITB = BITC = GND
MAX1984
0.50
0.4
0.1
0.5
0.1
0.65
0.8
1
1
1
0.81
?
μA
?
μA
N-Channel MOSFET Current Limit
MAX1985
MAX1986
0.40
0.30
0.52
0.39
0.65
0.52
A
CONTROL INPUTS
BITA, BITB, BITC Input Logic Low
Level
BITA, BITB, BITC Input Logic High
Level
MODE Input Logic Low Level
MODE Input Logic High Level
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
1.6
V IN - 0.4
0.4
0.4
V
V
V
V
MODE, BITA, BITB, BITC Input Bias
Current
2.7V < V IN < 5.5V
0.01
1
μA
2
_______________________________________________________________________________________
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